IRF8721TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

8.5mOhm

Continuous Drain Current (ID) :

14A

Mount :

Surface Mount

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Width :

3.9878mm

Nominal Vgs :

2.35 V

Rise Time :

11ns

Power Dissipation-Max :

2.5W Ta

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

14A Ta

FET Type :

N-Channel

Terminal Form :

Gull wing

Fall Time (Typ) :

7 ns

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

8.1 ns

Power Dissipation :

2.5W

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Height :

1.4986mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 15V

Turn On Delay Time :

8.2 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 14A, 10V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Terminations :

8

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30