IRF8721GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Max Operating Temperature :

150°C

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 14A, 10V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

REACH SVHC :

No SVHC

Turn On Delay Time :

8.2 ns

Length :

4.9784mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rds On Max :

8.5 mΩ

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Input Capacitance :

1.04nF

Fall Time (Typ) :

7 ns

Mounting Type :

Surface Mount

Published :

2009

Rise Time :

11ns

Packaging :

Tube

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

8.1 ns

Number of Pins :

8

Nominal Vgs :

2.35 V

Width :

3.9878mm

Drain to Source Resistance :

12.5mOhm

Height :

1.4986mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Supplier Device Package :

8-SO

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 15V

Continuous Drain Current (ID) :

14A

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2.5W Ta