IRF8714TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.35V @ 25µA

REACH SVHC :

No SVHC

FET Type :

N-Channel

Radiation Hardening :

No

Fall Time (Typ) :

5 ns

Power Dissipation-Max :

2.5W Ta

Number of Terminations :

8

Height :

1.4986mm

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1.8 V

Rise Time :

9.9ns

Continuous Drain Current (ID) :

14A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Turn On Delay Time :

10 ns

Length :

4.9784mm

Transistor Element Material :

SILICON

Published :

2004

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Width :

3.9878mm

Turn-Off Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Number of Pins :

8

Series :

HEXFET®

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Power Dissipation :

2.5W

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Contact Plating :

Tin

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Resistance :

8.7mOhm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

65 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 14A, 10V