IRF8714GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Series :

HEXFET®

Rise Time :

9.9ns

Input Capacitance :

1.02nF

Power Dissipation-Max :

2.5W Ta

Drain to Source Resistance :

13mOhm

Nominal Vgs :

1.8 V

Rds On (Max) @ Id, Vgs :

8.7mOhm @ 14A, 10V

Turn-Off Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.9878mm

Length :

4.9784mm

Fall Time (Typ) :

5 ns

Turn On Delay Time :

10 ns

Supplier Device Package :

8-SO

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rds On Max :

8.7 mΩ

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Threshold Voltage :

1.8V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Drain to Source Voltage (Vdss) :

30V

Published :

2009

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Height :

1.4986mm

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14mA