IRF840PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

8A

Fall Time (Typ) :

20 ns

Number of Pins :

3

Recovery Time :

970 ns

Voltage - Rated DC :

500V

Drain to Source Breakdown Voltage :

500V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

JESD-609 Code :

e3

Power Dissipation :

125W

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Mount :

Through Hole

Turn-Off Delay Time :

49 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

8A

Number of Channels :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Terminations :

3

Package / Case :

TO-220-3

Factory Lead Time :

11 Weeks

FET Type :

N-Channel

Number of Elements :

1

Element Configuration :

Single

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

8A

Height :

9.01mm

Contact Plating :

Tin

Weight :

6.000006g

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Width :

4.7mm

Radiation Hardening :

No

Length :

10.41mm

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Threshold Voltage :

4V

Published :

1997

Power Dissipation-Max :

125W Tc

Drain-source On Resistance-Max :

0.85Ohm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

23ns