IRF840LCPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

125W Tc

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Termination :

Through Hole

Drain to Source Breakdown Voltage :

500V

Drain to Source Resistance :

850mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Mount :

Through Hole

Current Rating :

8A

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Element Configuration :

Single

Lead Free :

Lead Free

Rise Time :

25ns

Threshold Voltage :

4V

Rds On Max :

850 mΩ

Recovery Time :

740 ns

Mounting Type :

Through Hole

Number of Pins :

3

Supplier Device Package :

TO-220AB

Factory Lead Time :

8 Weeks

Length :

10.41mm

Width :

4.7mm

Resistance :

850mOhm

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.1nF

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Weight :

6.000006g

FET Type :

N-Channel

Published :

2007

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

19 ns

Dual Supply Voltage :

500V

Voltage - Rated DC :

500V

Vgs (Max) :

±30V

Power Dissipation :

125W

Drain to Source Voltage (Vdss) :

500V

Height :

9.01mm

Turn-Off Delay Time :

27 ns

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Nominal Vgs :

4 V

Turn On Delay Time :

12 ns