IRF840B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

125 ns

Width :

10.67mm

Supplier Device Package :

TO-220-3

Rise Time :

65ns

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Max Operating Temperature :

150°C

Published :

2005

Rds On (Max) @ Id, Vgs :

800mOhm @ 4A, 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

8A

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Power Dissipation-Max :

134W Tc

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Nominal Vgs :

4 V

Termination :

Through Hole

Number of Pins :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Fall Time (Typ) :

75 ns

Resistance :

800mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Rds On Max :

800 mΩ

Mount :

Through Hole

Input Capacitance :

1.8nF

Lead Free :

Lead Free

Dual Supply Voltage :

500V

Mounting Type :

Through Hole

Power Dissipation :

134W

Gate to Source Voltage (Vgs) :

30V

Drain to Source Resistance :

650mOhm