IRF840ASTRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Turn On Delay Time :

11 ns

Height :

4.83mm

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Supplier Device Package :

D2PAK

Number of Pins :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.67mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

23ns

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Weight :

1.437803g

Input Capacitance (Ciss) (Max) @ Vds :

1018pF @ 25V

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation :

3.1W

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

125W Tc

Published :

2016

Drain to Source Resistance :

850mOhm

Continuous Drain Current (ID) :

8A

Number of Elements :

1

Width :

9.65mm

Rds On Max :

850 mΩ

Number of Channels :

1

FET Type :

N-Channel

Fall Time (Typ) :

19 ns

Drain to Source Voltage (Vdss) :

500V

Input Capacitance :

1.018nF