IRF840APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Threshold Voltage :

4V

Turn On Delay Time :

11 ns

Drain to Source Resistance :

850mOhm

Drain to Source Breakdown Voltage :

500V

Nominal Vgs :

4 V

Radiation Hardening :

No

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Element Configuration :

Single

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

125W Tc

Factory Lead Time :

11 Weeks

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Rise Time :

23ns

Height :

9.01mm

Current Rating :

8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

19 ns

Number of Elements :

1

Min Operating Temperature :

-55°C

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1018pF @ 25V

Width :

4.7mm

Number of Channels :

1

Weight :

6.000006g

Number of Pins :

3

Resistance :

850mOhm

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Input Capacitance :

1.018nF

Contact Plating :

Tin

Power Dissipation :

125W

Lead Free :

Lead Free

Packaging :

Tube

Drain to Source Voltage (Vdss) :

500V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Length :

10.41mm

Turn-Off Delay Time :

26 ns

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220AB

Rds On Max :

850 mΩ