IRF840AL

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Mfr.Part #
IRF840AL
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 500V 8A I2PAK
Stock
1,796
In Stock :
1,796

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Current Rating :
8A
Rise Time :
23ns
Voltage - Rated DC :
500V
Height :
9.65mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
11 ns
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
1018pF @ 25V
Rds On (Max) @ Id, Vgs :
850mOhm @ 4.8A, 10V
Supplier Device Package :
I2PAK
Width :
4.7mm
Power Dissipation-Max :
3.1W Ta 125W Tc
Drain to Source Resistance :
850mOhm
Length :
10.41mm
Element Configuration :
Single
Lead Free :
Contains Lead
Min Operating Temperature :
-55°C
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Vgs (Max) :
±30V
Published :
2016
FET Type :
N-Channel
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
RoHS Status :
Non-RoHS Compliant
Mount :
Through Hole
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Turn-Off Delay Time :
26 ns
Rds On Max :
850 mΩ
Continuous Drain Current (ID) :
8A
Weight :
2.387001g
Fall Time (Typ) :
19 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
1.018nF
Drain to Source Breakdown Voltage :
500V
Number of Channels :
1
Gate to Source Voltage (Vgs) :
30V
Datasheets
IRF840AL
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF840AL from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Channels:1, IRF840AL pinout, IRF840AL datasheet PDF, IRF840AL amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF840AL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF840AL


N-Channel Tube 850mOhm @ 4.8A, 10V ±30V 1018pF @ 25V 38nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF840AL Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1018pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 850mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF840AL Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


IRF840AL Applications


There are a lot of Vishay Siliconix
IRF840AL applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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