IRF840

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

32A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

125W Tc

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs (Max) :

±20V

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Packaging :

Tube

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1.3pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.85Ohm

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Number of Elements :

1

Transistor Element Material :

SILICON