IRF840

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1.3pF @ 25V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drain-source On Resistance-Max :

0.85Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

8A

Packaging :

Tube

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

32A

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

125W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Terminal Position :

Single

Terminal Finish :

TIN LEAD