IRF8327STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

14A

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0073Ohm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 14A, 10V

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

7.8 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Number of Pins :

8

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 15V

JESD-30 Code :

R-XBCC-N3

RoHS Status :

ROHS3 Compliant

Rise Time :

8.9ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

2.2W Ta 42W Tc

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 60A Tc

Turn-Off Delay Time :

9.3 ns

Pulsed Drain Current-Max (IDM) :

110A

Radiation Hardening :

No

Continuous Drain Current (ID) :

60A

Number of Terminations :

3

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

DirectFET™ Isometric SQ

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

62 mJ

Fall Time (Typ) :

5.3 ns

Number of Elements :

1

Power Dissipation :

42W