IRF830S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Packaging :

Tube

Published :

2016

Drain to Source Resistance :

1.5Ohm

Element Configuration :

Single

Power Dissipation-Max :

3.1W Ta 74W Tc

Width :

9.65mm

Length :

10.67mm

Turn-Off Delay Time :

42 ns

Input Capacitance :

610pF

Lead Free :

Contains Lead

Supplier Device Package :

D2PAK

Fall Time (Typ) :

16 ns

Rise Time :

16ns

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Rds On Max :

1.5 Ω

Max Operating Temperature :

150°C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

8.2 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2.7A, 10V

Vgs (Max) :

±20V

Current Rating :

1.5A

Number of Channels :

1

Voltage - Rated DC :

500V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Drain to Source Breakdown Voltage :

500V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Height :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

4.5A

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V