IRF8302MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 31A, 10V

Gate to Source Voltage (Vgs) :

20V

Manufacturer Package Identifier :

MG-WDSON-5

Transistor Element Material :

SILICON

Package / Case :

DirectFET™ Isometric MX

Avalanche Energy Rating (Eas) :

260 mJ

Pulsed Drain Current-Max (IDM) :

250A

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 4.5V

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

6030pF @ 15V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

7

JESD-609 Code :

e1

Power Dissipation :

2.8W

Case Connection :

DRAIN

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

2.35V @ 150μA

ECCN Code :

EAR99

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Threshold Voltage :

1.35V

Drain to Source Breakdown Voltage :

30V

Number of Channels :

1

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XBCC-N3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

22 ns

Continuous Drain Current (ID) :

31A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

31A Ta 190A Tc

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Height :

700μm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Power Dissipation-Max :

2.8W Ta 104W Tc

Transistor Application :

SWITCHING

Rise Time :

37ns

Terminal Position :

BOTTOM

Number of Elements :

1

Turn-Off Delay Time :

20 ns

Radiation Hardening :

No