IRF8301MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

260 mJ

Pulsed Drain Current-Max (IDM) :

250A

Rise Time :

30ns

Published :

2013

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Power Dissipation :

2.8W

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Threshold Voltage :

1.7V

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

34A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 32A, 10V

Current - Continuous Drain (Id) @ 25°C :

34A Ta 192A Tc

Terminal Position :

BOTTOM

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6140pF @ 15V

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Number of Elements :

1

Case Connection :

DRAIN

Number of Terminations :

3

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Package / Case :

DirectFET™ Isometric MT

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 4.5V

Number of Pins :

7

Additional Feature :

ULTRA LOW RESISTANCE

Element Configuration :

Single

Fall Time (Typ) :

17 ns

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.8W Ta 89W Tc