IRF830

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Min Operating Temperature :

-55°C

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 3A, 10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Continuous Drain Current (ID) :

5A

Published :

2003

Factory Lead Time :

49 Weeks

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Max Operating Temperature :

150°C

Rise Time :

21ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Supplier Device Package :

TO-220AB

Input Capacitance :

620pF

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Power Dissipation :

74W

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

500V

Drain to Source Voltage (Vdss) :

500V

Height :

9.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Length :

10.41mm

Weight :

6.000006g

Number of Channels :

1

Rds On Max :

1.4 Ω

Vgs (Max) :

±30V

Power Dissipation-Max :

74W Tc

Width :

4.7mm

Lead Free :

Contains Lead

Current Rating :

5A

Number of Pins :

3

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Drain to Source Resistance :

1.4Ohm

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

500V

Turn-Off Delay Time :

21 ns