IRF822

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Series :

-

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.4A, 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Drain to Source Voltage (Vdss) :

500 V

Vgs (Max) :

±20V

Surface Mount :

No

Supplier Device Package :

TO-220AB

Terminal Finish :

TIN LEAD

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

7 A

Package :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

360 pF @ 25 V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Package / Case :

TO-220-3

Qualification Status :

COMMERCIAL

Manufacturer :

Rochester Electronics LLC

Power Dissipation (Max) :

50W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-609 Code :

e0

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

500 V

Drain-source On Resistance-Max :

4 Ω

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

No

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Product Status :

Active