IRF820SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.83mm

Vgs (Max) :

±20V

Rds On Max :

3 Ω

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Weight :

1.437803g

Drain to Source Resistance :

3Ohm

Rise Time :

8.8ns

Resistance :

3Ohm

Voltage - Rated DC :

500V

Continuous Drain Current (ID) :

2.5A

Turn-Off Delay Time :

33 ns

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Number of Channels :

1

Current Rating :

2.5A

Power Dissipation :

3.1W

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

Fall Time (Typ) :

16 ns

Number of Pins :

3

Input Capacitance :

360pF

Turn On Delay Time :

8 ns

Number of Elements :

1

Element Configuration :

Single

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Length :

10.67mm

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package :

D2PAK

Power Dissipation-Max :

3.1W Ta 50W Tc

Width :

9.65mm

Min Operating Temperature :

-55°C

FET Type :

N-Channel