IRF820AS

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Mounting Type :

Surface Mount

Input Capacitance :

340pF

Length :

10.67mm

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Number of Pins :

3

Power Dissipation :

50W

Fall Time (Typ) :

13 ns

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

REACH SVHC :

Unknown

Height :

4.83mm

Supplier Device Package :

D2PAK

Radiation Hardening :

No

Rise Time :

12ns

Threshold Voltage :

4.5V

Turn On Delay Time :

8.1 ns

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Number of Channels :

1

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

16 ns

Min Operating Temperature :

-55°C

Rds On Max :

3 Ω

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

3Ohm

Continuous Drain Current (ID) :

2.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Power Dissipation-Max :

50W Tc

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Mount :

Surface Mount

Published :

2011

Resistance :

3Ohm

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube