IRF820APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

50W Tc

Width :

4.7mm

Rds On Max :

3 Ω

REACH SVHC :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Height :

9.01mm

Rise Time :

12ns

Mounting Type :

Through Hole

Resistance :

3Ohm

Turn-Off Delay Time :

16 ns

Vgs (Max) :

±30V

Input Capacitance :

340pF

Lead Free :

Lead Free

Package / Case :

TO-220-3

Recovery Time :

500 ns

Weight :

6.000006g

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Threshold Voltage :

4.5V

Number of Pins :

3

Element Configuration :

Single

Published :

2004

Turn On Delay Time :

8.1 ns

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-220AB

Min Operating Temperature :

-55°C

Drain to Source Resistance :

3Ohm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

500V

Length :

10.41mm

Number of Elements :

1

Fall Time (Typ) :

13 ns

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

2.5A

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Packaging :

Tube

Nominal Vgs :

4.5 V

Power Dissipation :

50W

Operating Temperature :

-55°C~150°C TJ