IRF7811APBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Supplier Device Package :

8-SO

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Mount :

Surface Mount

Power Dissipation :

2.5W

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

11A Ta

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

28V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 15V

Current Rating :

11.4A

Continuous Drain Current (ID) :

11A

Drain to Source Breakdown Voltage :

28V

Series :

HEXFET®

Published :

2008

Input Capacitance :

1.76nF

Rds On Max :

10 MΩ

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Number of Pins :

8

Voltage - Rated DC :

28V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Rds On (Max) @ Id, Vgs :

10mOhm @ 11A, 10V

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Vgs (Max) :

±12V