IRF7811APBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Number of Pins :

8

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Drain to Source Breakdown Voltage :

28V

Drain to Source Voltage (Vdss) :

28V

Rds On (Max) @ Id, Vgs :

10mOhm @ 11A, 10V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Voltage - Rated DC :

28V

Power Dissipation-Max :

2.5W Ta

RoHS Status :

RoHS Compliant

Number of Elements :

1

Current Rating :

11.4A

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Published :

2008

Gate to Source Voltage (Vgs) :

12V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 15V

Rds On Max :

10 MΩ

FET Type :

N-Channel

Packaging :

Tube

Mounting Type :

Surface Mount

Supplier Device Package :

8-SO

Power Dissipation :

2.5W

Input Capacitance :

1.76nF

Mount :

Surface Mount