IRF7809

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Current - Continuous Drain (Id) @ 25°C :

17.6A Ta

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 5V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

100A

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.5W Ta

Surface Mount :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain-source On Resistance-Max :

0.009Ohm

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature (Max) :

150°C

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

13.3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual