IRF7463PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2004

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

14A

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

110A

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JEDEC-95 Code :

MS-012AA

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.008Ohm

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

320 mJ

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel