IRF7241TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain Current-Max (Abs) (ID) :

6.2A

Rds On (Max) @ Id, Vgs :

41m Ω @ 6.2A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

Not Qualified

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Power Dissipation-Max :

2.5W Ta

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Series :

HEXFET®

ECCN Code :

EAR99

JEDEC-95 Code :

MS-012AA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Dual

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

8

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-G8