IRF1405ZSPBF

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Mfr.Part #
IRF1405ZSPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 75A TO263-3-2
Stock
10,031
In Stock :
10,031

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
9.65mm
Number of Terminations :
2
Packaging :
Tube
Continuous Drain Current (ID) :
75A
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
1
Nominal Vgs :
4 V
Turn On Delay Time :
18 ns
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Rise Time :
110ns
Pulsed Drain Current-Max (IDM) :
600A
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Power Dissipation :
230W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
Published :
2003
Avalanche Energy Rating (Eas) :
420 mJ
Threshold Voltage :
4V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Lead Free :
Lead Free
Fall Time (Typ) :
82 ns
Length :
10.668mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Peak Reflow Temperature (Cel) :
260
Vgs (Max) :
±20V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Input Capacitance (Ciss) (Max) @ Vds :
4780pF @ 25V
Series :
HEXFET®
Time@Peak Reflow Temperature-Max (s) :
30
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
4.9m Ω @ 75A, 10V
Drain to Source Breakdown Voltage :
55V
Radiation Hardening :
No
Resistance :
4.9mOhm
Power Dissipation-Max :
230W Tc
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Turn-Off Delay Time :
48 ns
Height :
4.826mm
Datasheets
IRF1405ZSPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF1405ZSPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF1405ZSPBF pinout, IRF1405ZSPBF datasheet PDF, IRF1405ZSPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF1405ZSPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF1405ZSPBF


N-Channel Tube 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1405ZSPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1405ZSPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V


IRF1405ZSPBF Applications


There are a lot of Infineon Technologies
IRF1405ZSPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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