IRF1010EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

12 ns

Series :

HEXFET®

Height :

16.51mm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

78ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

FET Type :

N-Channel

Package / Case :

TO-220-3

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Current Rating :

84A

Voltage - Rated DC :

60V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

12m Ω @ 50A, 10V

Number of Pins :

3

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Published :

2001

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

ECCN Code :

EAR99

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

48 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

84A

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Power Dissipation :

170W

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Dual Supply Voltage :

60V

Termination :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Lead Pitch :

2.54mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Lead Free :

Lead Free

Threshold Voltage :

4V

Width :

4.826mm

Resistance :

12mOhm

Fall Time (Typ) :

53 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

200W Tc

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN