IRF100S201

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Mfr.Part #
IRF100S201
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 192A D2PAK
Stock
2,752
In Stock :
2,752

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Factory Lead Time :
12 Weeks
Rds On Max :
4.2 mΩ
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Min Operating Temperature :
-55°C
Series :
HEXFET®, StrongIRFET™
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Drain to Source Voltage (Vdss) :
100V
Continuous Drain Current (ID) :
192A
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
441W Tc
Lead Free :
Lead Free
Published :
2013
Max Operating Temperature :
175°C
Supplier Device Package :
D2PAK (TO-263AB)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9500pF @ 50V
Drain to Source Resistance :
3.5mOhm
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
4.2mOhm @ 115A, 10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance :
9.5nF
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
192A Tc
Datasheets
IRF100S201
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF100S201 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, IRF100S201 pinout, IRF100S201 datasheet PDF, IRF100S201 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF100S201 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF100S201


N-Channel Tape & Reel (TR) 4.2mOhm @ 115A, 10V ±20V 9500pF @ 50V 255nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF100S201 Overview


A device's maximum input capacitance is 9500pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 192A for this device. Drain current refers to the capacity of the device to conduct continuous current.The Drain-to-Source Resistance (DTS) of a MOSFET is 3.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF100S201 Features


a continuous drain current (ID) of 192A
single MOSFETs transistor is 3.5mOhm
a 100V drain to source voltage (Vdss)


IRF100S201 Applications


There are a lot of Infineon Technologies
IRF100S201 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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