IRF1010EZLPBF
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- Mfr.Part #
- IRF1010EZLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A TO262
- Stock
- 6,247
- In Stock ：
- 6,247
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Published :
- 2002
- Height :
- 9.65mm
- Length :
- 10.668mm
- Power Dissipation :
- 140W
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Current Rating :
- 75A
- Number of Pins :
- 3
- Fall Time (Typ) :
- 54 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2810pF @ 25V
- Turn-Off Delay Time :
- 38 ns
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Turn On Delay Time :
- 19 ns
- Power Dissipation-Max :
- 140W Tc
- Voltage - Rated DC :
- 60V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Width :
- 4.826mm
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Rise Time :
- 90ns
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 75A
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 51A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IRF1010EZLPBF
N-Channel Tube 8.5m Ω @ 51A, 10V ±20V 2810pF @ 25V 86nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1010EZLPBF Overview
A device's maximal input capacitance is 2810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 38 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRF1010EZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38 ns
IRF1010EZLPBF Applications
There are a lot of Infineon Technologies
IRF1010EZLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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