IRF100P218XKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

209A

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

555nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.28m Ω @ 100A, 10V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Factory Lead Time :

18 Weeks

Turn On Delay Time :

50 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

170 ns

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Power Dissipation-Max :

556W Tc

Current - Continuous Drain (Id) @ 25°C :

209A Tc

Input Capacitance (Ciss) (Max) @ Vds :

25000pF @ 50V

Vgs(th) (Max) @ Id :

3.8V @ 278μA

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

3.8W

Max Junction Temperature (Tj) :

175°C

Height :

24.99mm

Series :

StrongIRFET™

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V