IRF1010EZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

90ns

Voltage - Rated DC :

60V

Turn-Off Delay Time :

38 ns

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 51A, 10V

Series :

HEXFET®

Resistance :

8.5mOhm

Packaging :

Tube

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Dual Supply Voltage :

60V

Published :

2004

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Lead Free :

Contains Lead, Lead Free

Package / Case :

TO-220-3

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Width :

4.826mm

Transistor Application :

SWITCHING

Length :

10.668mm

Turn On Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Continuous Drain Current (ID) :

75A

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

99 mJ

ECCN Code :

EAR99

Power Dissipation :

140W

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 100µA

Threshold Voltage :

4V

Factory Lead Time :

12 Weeks

Current Rating :

75A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

54 ns

Height :

9.017mm

Power Dissipation-Max :

140W Tc

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

20V