IRF1010EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

53 ns

Termination :

Through Hole

REACH SVHC :

No SVHC

Width :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

84A

Lead Pitch :

2.54mm

Dual Supply Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

170W

Radiation Hardening :

No

Nominal Vgs :

4 V

Rise Time :

78ns

Power Dissipation-Max :

200W Tc

Resistance :

12mOhm

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Height :

16.51mm

Rds On (Max) @ Id, Vgs :

12m Ω @ 50A, 10V

ECCN Code :

EAR99

Turn On Delay Time :

12 ns

Length :

10.668mm

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Lead Free :

Lead Free

Turn-Off Delay Time :

48 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Packaging :

Tube

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

84A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Case Connection :

DRAIN

Published :

2001

Threshold Voltage :

4V

Element Configuration :

Single

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Series :

HEXFET®