IRF1010EZ

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 51A, 10V

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

340A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

99 mJ

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Power Dissipation-Max :

140W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 100µA

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Drain-source On Resistance-Max :

0.0085Ohm

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Series :

HEXFET®