IRF100P218AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

556

Brand :

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Rds On (Max) @ Id, Vgs :

1.28mOhm @ 100A, 10V

FET Feature :

-

Mounting Type :

Through Hole

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

24000 pF @ 50 V

Product Status :

Active

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Product Category :

MOSFET

Package / Case :

TO-247-3

Channel Type :

N Channel

FET Type :

N-Channel

Qualification :

-

Maximum Operating Temperature :

+ 175 C

Continuous Drain Current Id :

209

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

PG-TO247-3

Vgs(th) (Max) @ Id :

3.8V @ 278μA

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

209A (Tc)

Product Type :

MOSFET

Series :

StrongIRFET?

Packaging :

Tube

Mounting Style :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Power Dissipation (Max) :

3.8W (Ta), 556W (Tc)

Drain to Source Voltage (Vdss) :

100 V

Gate Charge (Qg) (Max) @ Vgs :

412 nC @ 10 V

Manufacturer :

Infineon

Package :

Tube