IRF100S201

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

9.5nF

Packaging :

Tape and Reel (TR)

Published :

2013

Lead Free :

Lead Free

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 115A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Min Operating Temperature :

-55°C

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

D2PAK (TO-263AB)

Power Dissipation-Max :

441W Tc

Series :

HEXFET®, StrongIRFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9500pF @ 50V

Continuous Drain Current (ID) :

192A

Rds On Max :

4.2 mΩ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

192A Tc

Max Operating Temperature :

175°C

FET Type :

N-Channel

Drain to Source Resistance :

3.5mOhm