IRF100P219XKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

3.8V @ 278μA

Avalanche Energy Rating (Eas) :

464 mJ

Operating Temperature :

-55°C~175°C TJ

Series :

StrongIRFET™

ECCN Code :

EAR99

Surface Mount :

No

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

195A

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Power Dissipation-Max :

341W Tc

JEDEC-95 Code :

TO-247AC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

12020pF @ 50V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

780A

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0017Ohm