IPG20N10S436AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, OptiMOS™

Case Connection :

DRAIN

Number of Terminations :

6

Vgs(th) (Max) @ Id :

3.5V @ 16μA

Published :

2013

FET Type :

2 N-Channel (Dual)

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

20A

Halogen Free :

Halogen Free

Turn On Delay Time :

3 ns

Number of Elements :

2

Rise Time :

1ns

Power - Max :

43W

Mounting Type :

Surface Mount, Wettable Flank

Avalanche Energy Rating (Eas) :

60 mJ

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-F6

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

43W

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

8

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

4 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.036Ohm

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Max Dual Supply Voltage :

100V

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

36m Ω @ 17A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Element Material :

SILICON