IPG20N04S4L07ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0072Ohm

Halogen Free :

Halogen Free

FET Feature :

Logic Level Gate

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 17A, 10V

Turn-Off Delay Time :

50 ns

Number of Terminations :

8

Lead Free :

Contains Lead

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Series :

Automotive, AEC-Q101, OptiMOS™

Max Power Dissipation :

65W

Fall Time (Typ) :

25 ns

Avalanche Energy Rating (Eas) :

230 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 25V

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

8-PowerVDFN

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

20A

Factory Lead Time :

12 Weeks

Published :

2010

Vgs(th) (Max) @ Id :

2.2V @ 30μA

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Flat

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power - Max :

65W

Rise Time :

4ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9 ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE