IPG20N04S4L11ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Number of Elements :

2

Series :

Automotive, AEC-Q101, OptiMOS™

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Fall Time (Typ) :

15 ns

Drain-source On Resistance-Max :

0.0116Ohm

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Terminal Form :

Flat

Max Power Dissipation :

41W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 17A, 10V

Max Dual Supply Voltage :

40V

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

41W

FET Feature :

Logic Level Gate

Published :

2010

Number of Pins :

8

Transistor Element Material :

SILICON

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Rise Time :

2ns

Vgs(th) (Max) @ Id :

2.2V @ 15μA

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

20A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Number of Terminations :

6

Turn On Delay Time :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V