IPG20N04S4L11ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0116Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

41W

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F6

FET Feature :

Logic Level Gate

Terminal Finish :

Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Max Power Dissipation :

41W

Number of Terminations :

6

Series :

Automotive, AEC-Q101, OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.2V @ 15μA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

2010

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 17A, 10V

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

2ns

Turn-Off Delay Time :

25 ns

JESD-609 Code :

e3

Turn On Delay Time :

5 ns

Package / Case :

8-PowerVDFN

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant