IPG20N04S4L08ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Flat

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Number of Elements :

2

Series :

Automotive, AEC-Q101, OptiMOS™

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 17A, 10V

Avalanche Energy Rating (Eas) :

145 mJ

Max Power Dissipation :

54W

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Max Dual Supply Voltage :

40V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

20A

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

2.2V @ 22μA

Halogen Free :

Halogen Free

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Rise Time :

3ns

Lead Free :

Contains Lead

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3050pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power - Max :

54W

Number of Terminations :

8