IPG20N04S4L08ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3050pF @ 25V

Factory Lead Time :

12 Weeks

Published :

2010

Continuous Drain Current (ID) :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 17A, 10V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Number of Pins :

8

Fall Time (Typ) :

20 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

7 ns

Vgs(th) (Max) @ Id :

2.2V @ 22μA

FET Feature :

Logic Level Gate

Avalanche Energy Rating (Eas) :

145 mJ

Transistor Element Material :

SILICON

Terminal Form :

Flat

ECCN Code :

EAR99

Package / Case :

8-PowerVDFN

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

54W

Rise Time :

3ns

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

40V

Lead Free :

Contains Lead

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Turn-Off Delay Time :

40 ns

Power - Max :

54W