IPG20N06S415ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Flat

Height :

1mm

Drain-source On Resistance-Max :

0.0155Ohm

Fall Time (Typ) :

9 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerVDFN

Reach Compliance Code :

not_compliant

Width :

6.15mm

Number of Pins :

8

Number of Elements :

2

Number of Terminations :

8

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

60V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

17 ns

Continuous Drain Current (ID) :

20A

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 17A, 10V

Turn On Delay Time :

12 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 20µA

Power Dissipation :

50W

Element Configuration :

Dual

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

90 mJ

Series :

Automotive, AEC-Q101, OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Length :

5.15mm

Halogen Free :

Halogen Free

Rise Time :

2ns

Published :

2005

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

50W

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED