IPG20N06S2L-35AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

65W

Number of Elements :

2

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Supplier Device Package :

PG-TDSON-8-10

Power - Max :

65W

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

65W

Mounting Type :

Surface Mount, Wettable Flank

Input Capacitance :

790pF

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Min Operating Temperature :

-55°C

Drain to Source Resistance :

28mOhm

Vgs(th) (Max) @ Id :

2V @ 27μA

Rds On (Max) @ Id, Vgs :

35mOhm @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

35 mΩ

Lead Free :

Contains Lead

FET Feature :

Logic Level Gate

Max Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Published :

2013

FET Type :

2 N-Channel (Dual)

Series :

Automotive, AEC-Q101, OptiMOS™

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

20A