IPG20N06S2L-35AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Supplier Device Package :

PG-TDSON-8-10

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

35mOhm @ 15A, 10V

FET Feature :

Logic Level Gate

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Drain to Source Resistance :

28mOhm

Power - Max :

65W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Number of Elements :

2

Max Dual Supply Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Continuous Drain Current (ID) :

20A

Series :

Automotive, AEC-Q101, OptiMOS™

Input Capacitance :

790pF

Max Power Dissipation :

65W

Current - Continuous Drain (Id) @ 25°C :

2A Tc

RoHS Status :

ROHS3 Compliant

Rds On Max :

35 mΩ

Published :

2013

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

2V @ 27μA

Packaging :

Tape and Reel (TR)

Power Dissipation :

65W

Mounting Type :

Surface Mount, Wettable Flank

Max Operating Temperature :

175°C

FET Type :

2 N-Channel (Dual)