HUFA76504DK8T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

2.5W

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Configuration :

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

2

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

80V

Rds On (Max) @ Id, Vgs :

200m Ω @ 2.5A, 10V

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

2.5A

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.2Ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

UltraFET™