HUFA75309T3ST
- Mfr.Part #
- HUFA75309T3ST
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 3A SOT223-4
- Stock
- 34,459
- In Stock :
- 34,459
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 55V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 3A
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 20V
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-G4
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Terminal Form :
- Gull wing
- Series :
- UltraFET™
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.07Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 352pF @ 25V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Number of Terminations :
- 4
- Power Dissipation-Max :
- 1.1W Ta
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 55V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- HUFA75309T3ST

N-Channel Tape & Reel (TR) 70m Ω @ 3A, 10V ±20V 352pF @ 25V 23nC @ 20V 55V TO-261-4, TO-261AA
HUFA75309T3ST Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 352pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 3A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
HUFA75309T3ST Features
a 55V drain to source voltage (Vdss)
HUFA75309T3ST Applications
There are a lot of Rochester Electronics, LLC
HUFA75309T3ST applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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