HUFA75309T3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 20V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.07Ohm

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Series :

UltraFET™

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Power Dissipation-Max :

1.1W Ta

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

352pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

COMMERCIAL