HUFA75307T3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.1W Ta

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Current Rating :

2.6A

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

1.1W

Package / Case :

TO-261-4, TO-261AA

Contact Plating :

Tin

Transistor Application :

SWITCHING

Fall Time (Typ) :

30 ns

Terminal Position :

Dual

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Weight :

188mg

Published :

2002

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Pins :

4

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Mount :

Surface Mount

Height :

1.8mm

Element Configuration :

Single

Lead Free :

Lead Free

Voltage - Rated DC :

55V

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, UltraFET™

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.09Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.7mm

Length :

6.7mm

Drain to Source Breakdown Voltage :

55V

Continuous Drain Current (ID) :

2.6A

Turn On Delay Time :

5 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 20V

JESD-609 Code :

e3

Number of Terminations :

4