HUFA75307D3S
- Mfr.Part #
- HUFA75307D3S
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 15A TO252AA
- Stock
- 11,307
- In Stock :
- 11,307
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- COMMERCIAL
- Terminal Position :
- Single
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 20V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 45W Tc
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 15A
- Series :
- UltraFET™
- Drain-source On Resistance-Max :
- 0.09Ohm
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 55V
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs (Max) :
- ±20V
- Datasheets
- HUFA75307D3S

N-Channel Tube 90m Ω @ 15A, 10V ±20V 250pF @ 25V 20nC @ 20V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75307D3S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 250pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 15A.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
HUFA75307D3S Features
a 55V drain to source voltage (Vdss)
HUFA75307D3S Applications
There are a lot of Rochester Electronics, LLC
HUFA75307D3S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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