HS8K1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

348pF 429pF @ 15V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

10A Ta 11A Ta

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

10A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Reach Compliance Code :

not_compliant

Configuration :

COMPLEX

Terminal Form :

NO LEAD

Transistor Application :

SWITCHING

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

6nC, 7.4nC @ 10V

Avalanche Energy Rating (Eas) :

7.6 mJ

Case Connection :

DRAIN SOURCE

Published :

2017

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Number of Elements :

2

Drain-source On Resistance-Max :

0.02Ohm

JESD-30 Code :

S-PDSO-N8

Power - Max :

2W Ta

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

40A

FET Feature :

Standard

Package / Case :

8-UDFN Exposed Pad