HS8K1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Reach Compliance Code :

not_compliant

Package / Case :

8-UDFN Exposed Pad

Published :

2017

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

6nC, 7.4nC @ 10V

Power - Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

348pF 429pF @ 15V

Packaging :

Cut Tape (CT)

Drain Current-Max (Abs) (ID) :

10A

JESD-30 Code :

S-PDSO-N8

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.02Ohm

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V

Avalanche Energy Rating (Eas) :

7.6 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Case Connection :

DRAIN SOURCE

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

10A Ta 11A Ta

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Configuration :

COMPLEX

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

16 Weeks

FET Feature :

Standard