HS8K1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Reach Compliance Code :

not_compliant

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-UDFN Exposed Pad

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N8

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6nC, 7.4nC @ 10V

Transistor Application :

SWITCHING

Configuration :

COMPLEX

Drain-source On Resistance-Max :

0.02Ohm

Drain Current-Max (Abs) (ID) :

10A

Power - Max :

2W Ta

Avalanche Energy Rating (Eas) :

7.6 mJ

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V

FET Feature :

Standard

Case Connection :

DRAIN SOURCE

FET Type :

2 N-Channel (Dual)

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

10A Ta 11A Ta

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

348pF 429pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

40A