HS8K11TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

20 Weeks

Continuous Drain Current (ID) :

11A

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

COMPLEX

Avalanche Energy Rating (Eas) :

3.6 mJ

Packaging :

Cut Tape (CT)

Drain Current-Max (Abs) (ID) :

7A

Operating Temperature :

150°C TJ

Number of Elements :

2

FET Feature :

Logic Level Gate

Package / Case :

8-UDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0291ohm

Current - Continuous Drain (Id) @ 25°C :

7A 11A

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

17.9m Ω @ 7A, 10V

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2015

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Case Connection :

DRAIN SOURCE

JESD-30 Code :

S-PDSO-N8

Gate Charge (Qg) (Max) @ Vgs :

11.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

28A

Terminal Form :

NO LEAD

Number of Terminations :

8