HP8KA1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.007Ohm

Vgs(th) (Max) @ Id :

2.5V @ 10mA

Packaging :

Cut Tape (CT)

Factory Lead Time :

20 Weeks

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

5m Ω @ 14A, 10V

Number of Terminations :

8

Published :

2015

Operating Temperature :

150°C TJ

Number of Elements :

2

Continuous Drain Current (ID) :

14A

Mounting Type :

Surface Mount

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Power - Max :

3W

Package / Case :

8-PowerTDFN

Max Power Dissipation :

3W

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V